IRG4IBC30FD diode equivalent, insulated gate bipolar transistor with ultrafast soft recovery diode.
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* Very Low 1.59V votage drop 2.5kV, 60s insulation voltage
4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies (.
V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
∫
trr id d t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO .
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